1 power transistors 2SD2273 silicon npn triple diffusion planar type darlington for power amplification complementary to 2sb1500 n features l optimum for 40w hifi output l high foward current transfer ratio h fe : 5000 to 30000 l low collector to emitter saturation voltage v ce(sat) : <2.5v n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 100 80 5 6 3 45 3.5 150 C55 to +150 unit v v v a a w ?c ?c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i cbo i ceo i ebo v ceo h fe1 h fe2 * v ce(sat) v be(sat) f t t on t stg t f conditions v cb = 100v, i e = 0 v ce = 80v, i b = 0 v eb = 5v, i c = 0 i c = 30ma, i b = 0 v ce = 5v, i c = 1a v ce = 5v, i c = 2a i c = 2a, i b = 2ma i c = 2a, i b = 2ma v ce = 10v, i c = 0.5a, f = 1mhz i c = 2a, i b1 = 2ma, i b2 = C2ma, v cc = 50v min 80 2000 5000 typ 20 3.5 2.5 0.6 max 100 100 100 30000 2.5 3.0 unit m a m a m a v v v mhz m s m s m s * h fe2 rank classification rank q p h fe2 5000 to 15000 8000 to 30000 t c =25 c ta=25 c unit: mm internal connection 1:base 2:collector 3:emitter topC3l package 20.0 0.5 6.0 10.0 26.0 0.5 20.0 0.5 1.5 2.5 solder dip 10.9 0.5 123 2.0 0.3 3.0 0.3 1.0 0.2 5.0 0.3 3.0 4.0 2.0 5.45 0.3 0.6 0.2 1.5 2.7 0.3 1.5 2.0 f 3.3 0.2 3.0 b e c
2 power transistors 2SD2273 p c ta i c v ce v be(sat) i c v ce(sat) i c h fe i c c ob v cb t on , t stg , t f i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 80 60 20 50 70 40 10 30 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) without heat sink (p c =3.5w) (1) (2) (3) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 6 5 4 3 2 1 i b =3ma t c =25?c 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.1 1 10 100 0.3 3 30 0.1 100 10 1 0.3 3 30 i c /i b =1000 t c =?5?c 100?c 25?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.1 1 10 100 0.3 3 30 0.1 100 10 1 0.3 3 30 i c /i b =1000 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 10 100 1000 10000 100000 v ce =5v 25?c ?5?c t c =100?c collector current i c ( a ) forward current transfer ratio h fe 1 3 10 30 100 1 1000 100 10 3 30 300 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 08 26 4 0.01 0.03 0.1 0.3 1 3 10 30 100 pulsed t w =1ms duty cycle=1% i c /i b =1000 (i b1 =? b2 ) v cc =50v t c =25?c t stg t f t on collector current i c ( a ) switching time t on ,t stg ,t f ( m s ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25?c 10ms t=1ms dc i cp i c collector to emitter voltage v ce ( v ) collector current i c ( a )
3 power transistors 2SD2273 r th(t) t 10 ? 10 2 10 ? 1 10 ? 10 10 3 10 4 0.1 1 10 100 1000 note: r th was measured at ta=25?c and under natural convection. (1) p t =10v 0.3a (3w) and without heat sink (2) p t =10v 1.0a (10w) and with a 100 100 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w )
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